Application of Infrared Spectroscopy Method in Diagnosis on Potential Fault of Damaged Silicon Insulator in SF6 Electrical Equipment
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Application of Infrared Spectroscopy Method in Diagnosis on Potential Fault of Damaged Silicon Insulator in SF6 Electrical Equipment
Vol. 35, Issue 8, Pages: 1058-1061(2016)
作者机构:
1. 国网陕西省电力公司电力科学研究院
2. 中国广州分析测试中心
作者简介:
基金信息:
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Application of Infrared Spectroscopy Method in Diagnosis on Potential Fault of Damaged Silicon Insulator in SF6 Electrical Equipment. [J]. 35(8):1058-1061(2016)
DOI:
Application of Infrared Spectroscopy Method in Diagnosis on Potential Fault of Damaged Silicon Insulator in SF6 Electrical Equipment. [J]. 35(8):1058-1061(2016)DOI:
Application of Infrared Spectroscopy Method in Diagnosis on Potential Fault of Damaged Silicon Insulator in SF6 Electrical Equipment
SiF4 was qualitatively and quantitatively analyzed by Fourier transferred infrared spectroscopy.The linear range for the method was 10-500 μL/L,and the detection limit was 1 μL/L.The method was applied in the potential fault diagnosis of SF6 gas insulated switch,and the effectiveness of the SiF4 in the diagnosis of the internal conditions in the equipment was verified.
关键词
高压绝缘设备红外光谱分析SF6气体分解产物SiF4 检测
Keywords
high voltage insulation equipmentFourier infrared spectroscopic analysisSF6 decomposition productSiF4 detectionSF6