1.中国科学院化学研究所有机固体实验室,北京 100190
2.中国科学院大学化学科学学院,北京 100049
秦正生,博士,研究方向:有机偏振发光晶体管显示材料与器件,E-mail: qinzs@iccas.ac.cn
董焕丽,博士,研究员,研究方向:有机高分子材料与器件,E-mail: dhl522@iccas.ac.cn
收稿:2025-12-17,
修回:2025-01-11,
网络首发:2026-01-29,
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官少卿, 秦正生, 董焕丽. 有机发光晶体管:驱动发光一体化的新型显示技术[J/OL]. 分析测试学报, 2026,1-4.
GUAN Shao-qing, QIN Zheng-sheng, DONG Huan-li. Organic Light-Emitting Transistor: A Novel Display Technology Integrating Drive and Emission[J/OL]. Journal of Instrumental Analysis, 2026, 1-4.
官少卿, 秦正生, 董焕丽. 有机发光晶体管:驱动发光一体化的新型显示技术[J/OL]. 分析测试学报, 2026,1-4. DOI: 10.12452/j.fxcsxb.25121701.
GUAN Shao-qing, QIN Zheng-sheng, DONG Huan-li. Organic Light-Emitting Transistor: A Novel Display Technology Integrating Drive and Emission[J/OL]. Journal of Instrumental Analysis, 2026, 1-4. DOI: 10.12452/j.fxcsxb.25121701.
显示技术的持续创新对信息产业发展至关重要。有机发光晶体管(OLET)作为一种新兴的驱动发光一体化器件,因其具有将有机场效应晶体管的开关放大功能与有机发光二极管的发光特性集成于单一器件架构而备受关注。该文概述了OLET技术在材料创制与器件设计方面的最新进展。在高迁移率发光有机半导体材料方面,通过分子结构设计和聚集态优化等策略,成功突破了高迁移率与强发光难以协同的瓶颈;在器件性能方面,利用OLET独特的开放式发光特性和栅压调控机制,实现了高偏振度发光(偏振度高达0.97)和超窄光谱发射(半峰宽达13 nm)。这些突破性进展为发展下一代高性能、多功能集成的新型显示技术提供了新的技术路径,展现了OLET在推动显示技术变革方面的巨大潜力。
The continuous innovation in display technology is crucial for the development of the information industry. As an emerging type of monolithic integrated driving and light-emitting device, organic light-emitting transistors (OLET) have attracted considerable attention due to their integration of the switching/amplification functions of organic field-effect transistors and the light-emitting characteristics of light-emitting diodes within a single device architecture. This article reviews the latest advancements in OLET technology in terms of material innovation and device design. In the field of high mobility emissive organic semiconductors, the bottleneck of balancing high mobility with strong luminescence has been successfully overcome through strategies including molecular structure design and aggregation state optimization. In terms of the device performance, leveraging the unique open-plane light-emitting characteristics and gate-voltage modulation mechanism of OLET, highly polarized emission (with a degree of polarization up to 0.97) and ultranarrow spectral emission (with a full width at half maximum as low as 13 nm) have been achieved. These breakthroughs provide a novel technological pathway for the development of next-generation high-performance, multifunctional integrated display technologies, demonstrating the significant potential of OLET in driving the evolution of display technology.
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